Pulsed Laser Diodes at 905 nm

LASER COMPONENTS Canada produces high power pulsed laser diodes (PLDs) at 905 nm. The AlGaAs structure of the 905 series allows for high reliability and temperature stability; it also achieves the best beam characteristics. If the wavelength has to be controlled exactly, a thermoelectric cooler (TEC) can be integrated into a TO-8 housing.

Our 905 nm PLDs are available in a TO-18, 5.6 mm, 9 mm, or 8-32 Coax housing as well as a chip on a ceramic submount. Customer-specific arrays and PLDs with other wavelengths are also available on request.

These laser diodes are used in range finding, speed monitoring, laser radars, security scanners, and laser light curtains or in testing and measurement systems.

The 905D series pulsed laser diodes are available as single elements or stacks with a peak power up to 650 W. At an efficiency of 1 W/A, the single elements achieve a peak power of 34 W, whereas the stack designs achieve an output of up to 650 W at a pulse length of 150 ns and a duty cycle of 0.1%.

Multi-junction pulsed laser diodes are similar to "nanostack" technology. LASER COMPONENTS' PLDs provide an impressive efficiency of up to 3.2 W/A with peak powers up to 115 W at a pulse length of 100 ns from a single chip.

The 115 W diode is based on three epitaxially integrated emitters with an active area of altogether only 235 x 10 µm. Other versions deliver an output power of 40 W from an active area of 85 x 10 µm and 80 W from 160 x 10 µm. The small area allows the laser power to be coupled easily into a fiber and combined with microoptics.

A hermetically sealed TO housing ensures high reliability, an excellent overdrive capability, and a very precise chip alignment inside the TO can.

Using the advanced "trench" process, we are able to build customer-specific PLD arrays with peak powers of more than 1 kW.

Stacked multi-junction pulsed laser diodes deliver a peak power up to 650 W at 905 nm. They are based on several epitaxially integrated emitters with a total emitting area of 200 µm x 10 µm and thus deliver an optimal power intensity. Depending on the number of integrated chips, a peak power of up to 650 W can be achieved. They deliver optimal power intensity and are suited in particular for medical applications and the coupling of optical fibers.

Characteristics of single emitters

• Pulse length: 150 ns
• Peak power: at least 70 W

Characteristics of stacked versions:

• Pulse length: 150 ns
• Peak power: up to 650 W

Application fields include: medical technology, ceilometers, altimeters, LIDAR, distance measurements

UA series pulsed laser diodes are high quality diodes hermetically sealed in a TO-56 metal housing. Produced in large quantities, they can compete in price with PLDs in a plastic housing. In addition, they are highly reliable, possess excellent overdrive capabilities, and feature optimal thermal stability and a very precise chip alignment inside the housing.

As a single element design, the 905DxxUA series achieves a peak power of 6 W to 19 W. The multi-junction versions (905D1S3JTxxUA) deliver a peak power of 40 W, 80 W, and 115 W as a function of the emitting area size at 100 ns and a duty cycle of 0.1%.

Our High-Power Multi-Juniction PLDs are also available as SMD components for easy direct mounting on a circuit board. These reliable InGaAs / GaAs structures deliver powers up to 120 W. They are available in source sizes of  225 μm (optional 75 µm or 150 µm). Due to their compact cubical design of mere 2 x 2 x 2 mm, our SMD PLDs may be used as top-looking or side-looking emitters.

To optimize divergence of the fast axis, an additional axis collimation (FAC) lens that is attached in front of the laser diode chip. Depending on the lens, divergences of 33 mrad can be achieved. Both the chip and the lens are integrated into a small, hermetically sealed TO-46 housing. As required for use in military technology, this design withstands acceleration rates of over 1000 g/ms without any problem.

This technology is also optionally available with 1550 nm pulsed laser diodes. If the wavelength has to be controlled exactly, a thermoelectric cooler (TEC) can be integrated into a TO-8 housing