The range of pulsed laser diodes (PLDs) manufactured by LASER COMPONENTS Canada continues to grow and can be optimally customized for each application. With our tested and proven multi-junction laser technology, which contains several epitaxially integrated emitters, peak powers up to 75 W can be achieved at a wavelength of 905 nm. This technology is available with a variety of emitter sizes, so that pulse powers of 25 W can be achieved using an 80 µm x 10 µm emitter. The somewhat larger 6 mil chip (160 µm x 10 µm) has a power of 50 W at a pulse length of 150 ns and a duty cycle of 0.1%. Due to its smaller emitting area the power provided by this laser can be more easily coupled into a fiber and combined with micro-optics. The new 9 mil version (235 µm x 10 µm) delivers a peak power of 75 W from a single multi-junction chip.
In order to utilize all of the technical advantages of these PLD chips, they are integrated into a hermetically sealed TO housing. This housing is extremely reliable, delivers an excellent overdrive performance, and has a very precise chip alignment. In addition to the multi-junction devices, single-chip lasers for power levels from 6 - 19 W are also offered in the same low-cost, high quality metal package.
Suitable Receivers - Si APDs at 905 nm
We also have suitable Si avalanche photodiodes available which can be delivered with PLDs as inexpensive samples upon request. In the new SARF500F2 series, a 905 nm band-pass filter comes already integrated into the modified TO-46 housing. The 500 µm APD chip is likewise optimized for the 905 nm wavelength allowing optimal performance in connection with the above-mentioned PLDs. The advantages of the SARF500F2 series are quite obvious: cost savings (i.e. since an external filter and additional assembly steps are no longer required), a small design, and optimal system properties at a measurement wavelength of 905 nm.
