InGaAs PIN Photodiodes by LASER COMPONENTS DG
The LASER COMPONENTS Detector Group (LC DG) has been manufacturing Si and InGaAs avalanche photodiodes in Tempe, Arizona – the traditional center of semiconductor manufacturing in the U.S.A. – since 2004.
In addition to production, LASER COMPONENTS also conducts product-oriented research: The latest result of this research was the InGaAs and extended InGaAs PIN photodiodes introduced at the end of 2013. There are three product families available:
- IG17: Regular InGaAs
with a response up to 1700 nm - IG22: Wavelength-extended InGaAs
with a response up to 2200 nm - IG26: Wavelength-extended InGaAs
with a response up to 2600 nm
All versions are panchromatic on a standard basis, which means that they also function in the visible spectral range. Additional advantages include a high linearity, an excellent sensitivity, and a low temperature coefficient of the sensitivity. Many different housings are available (e.g., SMD, chip on sub-mount, and thermoelectrically-cooled housings).
A special case is the version with an active area diameter of 1.3 mm – it yields 70% more signal than a detector with a diameter of 1 mm – while retaining the TO-46 housing with a 4.8 mm cap diameter.
Uncooled versions in a standard TO housing are generally available from stock – at competitive prices.
In addition to the standard portfolio, we also deliver customer-specific solutions. These primarily include components with special coatings on the windows, which are manufactured in Germany using IBS technology and then metallized, cut, and soldered to the caps by LC DG.
The main applications of IR detectors include laser monitoring, spectroscopy, FTNIR, and contact-free temperature measurements.
