In addition to the pulse laser diodes, we now offer continuous wave laser diodes at 808 nm with 1000 mW power from our in-house production. The base material is a reliable InGa(Al)As/GaAs material with a standard wavelength selection of +/- 3 nm. A power of 500 mW is already attainable at 1.1 A with this highly efficient structure. The laser chip is embedded in a hermetically sealed 9 mm CD package.
A monitor diode is integrated for performance control and regulation. This is an advantage especially for the configuration of medical devices. Further possible areas of application are in printing, material processing, illumination or measurement technology.
