HCSELs: New Laser Diode Type at 1.3 μm

The “crossing” of DFB and SM-VCSELs in on-wafer technology was successful for the first time worldwide at the HHI in Berlin. The implemented HCSEL (Horizontal Cavity Surface Emitting Laser) works uncooled and can be modulated up to 4 Gb/s. It unites the output power of the DFB with the significant advantage of on-wafer testing (in particular for high quantities). The trick is to implement the resonator using a 45° mirror instead of the conventional 90° mirror. In this way, a mostly conventional horizontal resonator is created, but it still has a vertical radiation.

The typical output power is 20 mW cw at 30 dB side mode suppression. Prototypes in SOT 4.6 housings can be ordered under the brand name SPECDILAS^®-H-1300-GMP. Customized products are available in the wavelength range from 1270 to 1700 nm.