Recent demand has lead to the development and launch of a new family of Silicon Avalanche photodiodes. The new SAT family is targeted for the 1.06 micron detection region. They achieve 2 - 3 times the efficiency of standard APDs at 1064 nm (> 38%), have a low dark current and optimum capacitance for low noise applications. The product is available with 800 µm and 3000 µm active areas and in many different packaging configurations. These APDs are manufactured at LASER COMPONENTS DG in Tempe, AZ, making us an excellent partner for applications where export compliance is a concern.
The SAT family is the latest addition to the range of Si and InGaAs APDs offered by LASER COMPONENTS. Si APDs are available with a diameter of up to 3.0 mm and packaging options include TEC, fiber receptacle and fiber pigtail.
