New Improved Specifications for Photline NIR800 Modulators

Thanks to a new LiNbO3 substrate and an associated process, the power handling has been increased to 14 dBm, a major improvement (more than doubling) compared to the previous specification of 10 dBm. The power handling of NIR modulators is a critical parameter, as it is limited by the stronger photo-refractive effect in this wavelength range, compared to that at 1550 nm. The 14 dBm power handling performance for all NIR800 devices is a strong asset and a key differentiator.

In addition to the above, all MPX800-LN05 and MPX800-LN-10 phase modulators now come with a lower Vπ, which is a key parameter for all modulators, especially for phase modulators (that do not benefit from the push-pull effect that is present with intensity modulators). A low Vπ makes the modulator easier to drive and the modulation efficiency better.

The Vπ reduction of 40% is significant, resulting in a 4 V typ. Vπ for the NIR-MPX800-LN-10 and a 3 V typ. Vπ for the NIR-MPX800-LN-05.

All MPX800 phase modulators now come with a reduced insertion loss, typically 3.5 dB.

The above performance improvements will facilitate the implementation of NIR800 modulators making the NIR800 series ‘a cut above the competition‘!