LASER COMPONENTS adds High Power 808 nm CW Laser Diodes to In House Production
In addition to manufacturing pulsed laser diodes, we are now also manufacturing continuous wave laser diodes at 808 nm with 1000mW power. The base material is a reliable InGa(Al)As/GaAs material with a standard wavelength selection of +/- 3 nm. A power of 500mW is already attainable at 1.1 A with this highly efficient structure. The laser chip is embedded in a hermetically sealed 9 mm CD package. A monitor diode is integrated for power control. Further possible areas of application are in printing, material processing, illumination or measurement technology.
