We specialise in high power pulsed laser diodes at 905 nm produced in its dedicated Canadian production facility. These are available as single chips and stacked arrays with a power output of up to 130 Watts.
The high reliability and temperature stability of these devices is due to the AlGaAs structure. Due to their high quality beam characteristics these diodes are used in range finding, surveying equipment, laser radar, speed monitoring, security barrier and optical applications.
These devices are capable of delivering output power of up to 130W. For example our stacked chip devices can deliver output power as high as 130 W from an active area of 400 x 340 µm. These 905 nm PLDs are available in a TO-18, 5.6 mm, 9 mm, or 8-32 Coax housing as well as a chip on a ceramic submount.
