InGaAs Photodiodes 500 - 2600 nm

The InGaAs Detectors series IG17, IG22 and IG26 were developed with an emphasis on quantum efficiency. 

Main Applications for IR Photodiodes:

• Spectroscopy (and NIR-FTIR in particular)
• Laser monitoring
• Non-contact temperature measurement
• Tunable diode laser spectroscopy (TDLS)
• Spectrophotometry, e.g. for measuring moisture
• Sorting applications
• Flame regulation

Key Features Include the Following:

• Peak sensitivities from 1.05 A/W to 1.45 A/W
• High dynamic range
• High linearity
• Low temperature coefficient of the sensitivity of up to 0.01%/K
• Panchromatic, i.e. sensitive in the Vis and NIR ranges

LASER COMPONENTS produces photodiodes in house at our production facility in Arizona. They have been available on the market since 2013 and offer a strong cost-performance ratio.

The following InGaAs detectors and Extended InGaAs photodiodes are available:

• IG17 series (500-1700 nm)
• IG22 series (500-2200 nm)
• IG26 series (500-2600 nm)

This product portfolio was designed with great attention to detail: One of our most obvious features is the panchromatic nature of all of our InGaAs photodiodes, providing detection down to 500 nm. Further advantages include a lower temperature coefficient and a reduced off-area sensitivity.  

Active diameters from 0.25 mm to 3 mm are available as standard, and are available in hermetically-sealed TO housings with or without an integrated Peltier cooler, as an SMD, on a ceramic mount, or simply as a chip.

In addition to the industry standard sizes of 1 mm and 2 mm, we also have an in-between active area size available: 1.3 mm. This makes it possible to package the photodiode in a TO-46 housing (with a base diameter of 5.3 mm), delivering 70% more signal in  the same housing dimensions compared to a photodiode with an active area of 1 mm.

Customer-specific designs are possible, such as hermetic integration of interference filters.