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SiC Hybrid Photodiodes (200 - 400 nm)

SiC hybrid photodiodes combine SiC UV-sensitive technology with a built-in transimpedance amplifier for very low light.

SiC Hybrid Detectors

SiC hybrid diodes consist of solar blind UV photodiodes, which are preferably used for monitoring UV light sources such as UVC LEDs and lamps, and a integrated transimpedance amplifier.
They are characterized by the following features:

  • Built-in transimpedance amplifier, optionally available with Rf = 10 MOhm, 100 MOhm, 1 GOhm, or 10 GOhm
  • Voltage output (Uout) of up to 5 V
  • Dynamic range with four orders of magnitude
  • Different detector sizes: 0.1 mm² and 1 mm²
  • Typical spectral sensitivity ranges from 200 nm to 355 nm
  • Special chip structure offers extended sensitivity up to 400 nm
  • Excellent long-term stability – even at high UVC radiation doses of up to 1000 W/m²
  • High temperature stability, operating temperature of up to 85°C
  • Adjustment of spectral sensitivity using filter technology for UVA, UVB, UVC, and other filter variations
  • Sensor isolated from housing
  • Hermetic TO housing
  • RoHS, REACH, and WEEE compliance

Built-in Transimpedance Amplifier

SiC hybrid photodiodes have a built-in transimpedance amplifier optionally available with Rf = 10 MOhm, 100 MOhm, or 1 GOhm. Another option even accommodates 10 GOhm. The high sensitivity of four orders of magnitude makes it possible to measure very dynamic signals. The output voltage (Uout) goes up to 5 V.

SiC Detectors with Filters

SiC photodiodes for UVC, UVB and UVA with integrated, radiation-resistant filters are available for use in special applications.

Window Variations SiC UV Photodiodes

The SiC UV photodiodese is available with a flat cap or a lens cap.

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