SiC Hybrid Photodiodes (200 - 400 nm)

SiC Hybrid Detectors

SiC hybrid diodes consist of solar blind UV photodiodes, which are preferably used for monitoring UV light sources such as UVC LEDs and lamps, and a integrated transimpedance amplifier.
They are characterized by the following features:

• Built-in transimpedance amplifier, optionally available with Rf = 10 MOhm, 100 MOhm, 1 GOhm, or 10 GOhm
• Voltage output (Uout) of up to 5 V
• Dynamic range with four orders of magnitude
• Different detector sizes: 0.1 mm² and 1 mm²
• Typical spectral sensitivity ranges from 200 nm to 355 nm
• Special chip structure offers extended sensitivity up to 400 nm
• Excellent long-term stability – even at high UVC radiation doses of up to 1000 W/m²
• High temperature stability, operating temperature of up to 85°C
• Adjustment of spectral sensitivity using filter technology for UVA, UVB, UVC, and other filter variations
• Sensor isolated from housing
• Hermetic TO housing
• RoHS, REACH, and WEEE compliance

Built-in Transimpedance Amplifier

SiC hybrid photodiodes have a built-in transimpedance amplifier optionally available with Rf = 10 MOhm, 100 MOhm, or 1 GOhm. Another option even accommodates 10 GOhm. The high sensitivity of four orders of magnitude makes it possible to measure very dynamic signals. The output voltage (Uout) goes up to 5 V.

SiC Detectors with Filters

SiC photodiodes for UVC, UVB and UVA with integrated, radiation-resistant filters are available for use in special applications.

Window Variations SiC UV Photodiodes

The SiC UV photodiodese is available with a flat cap or a lens cap.