The long standing ifw Optronics UV photodiode series has been a work-horse detector for decades now. This is, in part, due to the high resilience of the active material, silicon carbide (SiC), with its wide band-gap proffering low leakage currents, superior radiation hardness, and temperature insensitivity. This makes these devices ideal for space, x-ray and harsh environmental applications since they are also light-weight, small and reasonably priced.
Ifw’s existing JEA-series of photodiodes will now be joined with these new “Extended SiC“ photodiodes, which allow detection up to ~ 400 nm and so include the full UV-A, UV-B and UV-C spectrum.
While regular SiC with “4H” crystal structure shows reduced responsivity above 360 nm wavelength, we now supply, as the only worldwide producer, “6H-SiC” material with extended wavelength response. Our new sensors are available with 0.05 mm² and 0.1 mm² active areas, TO5 and TO18 packages, and include optional integrated band pass optical filters.
